Application and Research Status on Silicon Crystal Growth Under Magnetic Field
Author of the article:RAO Senlin;ZHANG Fayun;LUO Yufeng;XIONG Hanmeng;LI Yunming;HU Yun;ZHANG Juan
Author's Workplace：School of New Energy Science and Engineering,Xinyu College,Xinyu 338004,China;Key Laboratory of University in Jiangxi for Silicon Materials,Xinyu 338004,China;School of Mechanical and Electronic Engineering,Nanchang University,Nanchang 330031,China;East China Jiaotong University,Nanchang 330031,China
Key Words：magnetic field silicon crystal solid liquid interface melt flowing
Abstract：
In view of the application of static and non-static magnetic fields on the growth of silicon crystals, the effects of magnetic field on melt flow, solid-liquid interface morphology, impurity content and distribution in the process of silicon crystal growth are covered. The characteristics of static and non-static magnetic fields were emphatically compared and analyzed. The existing problems in the application were summarized, and the development trends in this field were prospected.
