功率半导体器件朝着大功率、高频率、高集成方向发展，带来棘手的散热难题，严重威胁其工作稳定性与可 靠性。 Si3 N4陶瓷具有高导热、高强度、热膨胀系数与第Ⅲ代半导体适配等特点，成为高性能陶瓷基板材料的理想之选， 但是不同烧结助剂体系及配比极大影响了Si3 N4陶瓷的烧结过程与产品性能。 因此，如何选用合适的烧结助剂，已成为 当前制备高导热、高强度Si3 N4陶瓷的关键。本文总结了目前制备高导热、高强度Si3 N4陶瓷用氧化物和非氧化物两类烧 结助剂体系的研究现状，分析了不同助剂体系对Si3 N4陶瓷的烧结致密化过程、微观结构调控、导热和力学性能的作用 机理，并展望了高导热、高强度Si3 N4陶瓷用烧结助剂体系未来的发展趋势和研究方向。

The ongoing evolution of power semiconductor devices toward higher power density, increased switching frequencies, and enhanced integration has introduced critical thermal management challenges, severely compromising their operational stability and long-term reliability. Silicon nitride (Si3 N4 ) ceramics, which are distinguished by exceptional thermal conductivity, superior mechanical performance, and a coefficient of thermal expansion (CTE) that is compatible with third-generation semiconductors, have emerged as ideal candidates for high-performance ceramic substrates. The composition and corresponding ratios of sintering additives strongly affect both the sintering process and final properties, making the selection of optimal additives a difficult challenge in realizing Si3 N4 ceramics with excellent heat conduction and robust mechanical reliability. This review systematically summarizes the current research progress in oxide and nonoxide sintering additive systems for the comprehensive fabrication of high-performance Si3 N4 ceramics and analyses the mechanisms by which various additive systems tailor the densification process, microstructure evolution, thermal conductivity and mechanical properties. Moreover, it forecasts future development trends and research directions for sintering aid systems for Si3 N4 ceramics with high thermal conductivity and high strength.