AgSbTe2由于其固有的极低热导率与较大的塞贝克系数，在中低温发电应用中具有很大的潜力。 但是由于 本征低载流子浓度和阳离子的无序性导致材料的低电荷迁移率， 并且二者存在强烈的耦合关系，AgSbTe2体系电学性 能一直未能有效提升。本文通过向Sb离子位点掺杂二价元素，制备了一系列AgSb0.96 Q0.04 Te2 (Q=Zn、Sn、Ge、Pb、Cd)热电 化合物，成功实现了载流子浓度与载流子迁移率之间的解耦，进而大幅提升了AgSbTe2热电性能。 研究发现，Pb元素的 掺杂可优化p型AgSbTe2的载流子浓度，同时提升载流子迁移率，进而大幅提升电学性能。相应的最大电导率和功率因 子在548K 时分别达到229S/cm 和 15.1μW/(cm·K2)， 相比未掺杂 AgSbTe2 样品分别提升了108%和 44%。 最终， AgSb0.96 Pb0.04 Te2 晶体在 298 与 548 K 下 zT 值分别达到了 0.60 与 1.53，且在 298~598K 内平均 zT 达 1.10。

AgSbTe2 has great potential for power generation applications from low to medium temperatures because of its inherent low thermal conductivity with a large Seebeck coefficient. However, the electrical properties of the AgSbTe2 system have not been effectively improved due to the intrinsically low carrier concentration and the disorder of the cations, which are physically coupled and lead to the low charge mobility of the material. In this work, a series of AgSb0.96 Q0.04 Te2 (Q=Ge, Zn, Cd, Sn, Pb) thermoelectric compounds were prepared by doping divalent elements into Sb ion sites, successfully achieving decoupling between the carrier concentration and carrier mobility, thereby greatly improving the thermoelectric performance of AgSbTe2 . The results show that doping with Pb can optimize the carrier concentration of p-type AgSbTe2 without decreasing carrier mobility, thereby greatly improving the electrical performance. The maximum conductivity and power factor for AgSb0.96 Pb0.04 Te2 reach 229 S/cm and 15.1 μW/(cm·K2) at 548 K, respectively, which are 108% and 44% greater than those of the intrinsic sample. The resulting zT value of the AgSb0.96 Pb0.04 Te2 crystal reaches 0.60 (298 K) and 1.53 (548 K), contributing a high average zT of ~1.10 from 298 K to 598 K.