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磁场作用下硅晶体生长的应用研究现状
Application and Research Status on Silicon Crystal Growth Under Magnetic Field
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- DOI:
- 作者:
- 饶森林 张发云 罗玉峰 熊含梦 李云明 胡云 章娟
RAO Senlin;ZHANG Fayun;LUO Yufeng;XIONG Hanmeng;LI Yunming;HU Yun;ZHANG Juan
- 作者单位:
- 新余学院新能源科学与工程学院 江西省高等学校硅材料重点实验室 南昌大学机电工程学院 华东交通大学
School of New Energy Science and Engineering,Xinyu College,Xinyu 338004,China;Key Laboratory of University in Jiangxi for Silicon Materials,Xinyu 338004,China;School of Mechanical and Electronic Engineering,Nanchang University,Nanchang 330031,China;East China Jiaotong University,Nanchang 330031,China
- 关键词:
- 磁场 晶体硅 固液界面 熔体流动
magnetic field silicon crystal solid liquid interface melt flowing
- 摘要:
- 针对静态磁场和非静态磁场在硅晶体生长中的应用研究现状,综述了磁场对硅晶体生长过程中熔体流动、固液界面形态、杂质含量及分布的影响,重点对比分析了静态磁场与非静态磁场的特点。总结了该应用当前存在的问题,并对未来的技术发展进行了展望。In view of the application of static and non-static magnetic fields on the growth of silicon crystals, the effects of magnetic field on melt flow, solid-liquid interface morphology, impurity content and distribution in the process of silicon crystal growth are covered. The characteristics of static and non-static magnetic fields were emphatically compared and analyzed. The existing problems in the application were summarized, and the development trends in this field were prospected.