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六方、立方氮化硼的制备和热传导性质研究进展
Research Progress on the Preparation and Thermal Conductivity Properties of Hexagonal and Cubic Boron Nitride
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- DOI:
- 作者:
- 武 成，王 燕，李坚富，朱昭捷，游振宇，涂朝阳
WU Cheng1,2, WANG Yan1,2, LI Jianfu1,2, ZHU Zhaojie1,2, YOU Zhenyu1,2, TU Chaoyang1,2
- 作者单位:
- 1.中国科学院 福建物质结构研究所，福建 福州 350002；2.中国福建光电信息科学与技术创新实验室(闽都创新实验 室)，福建 福州 350108
1. Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; 2. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China
- 关键词:
- 六方氮化硼；立方氮化硼；晶体生长；薄膜；热导率
hexagonal boron nitride; cubic boron nitride; crystal growth; film; thermal conductivity
- 摘要:
- 随着微电子技术的不断进步，电子芯片集成化电路越来越密集。 性能提高的同时，其内部热流密度不断攀
升，对电子器件的散热能力提出了更高的要求。 低热耗散材料严重制约了电子设备的性能和功效，有效的热传递和热管
理已成为下一代微处理器、集成电路、发光二极管等设备稳定工作的重要保障，因此亟需具有更高热导率的半导体材料
以提高电子器件的使用寿命。近年来，六方氮化硼(h-BN)和立方氮化硼(c-BN)引起了人们极大的研究兴趣，h-BN 具有与
石墨类似的层状晶体结构，常被称为“白石墨”，散热、绝缘性能良好；而 c-BN 为闪锌矿结构，具有类似于金刚石的晶体
结构，热导率仅次于金刚石，是第三代半导体中禁带宽度最大的材料。 研究表明，2 种晶体均具有良好的导热性能，可成
为新一代电子芯片散热材料，是当前热管理领域的研究热点。 本文对 h-BN 薄膜和 c-BN 单晶制备方法的研究进展进行
了综述，介绍了 h-BN 和 c-BN 热传导性质的研究成果，并对 h-BN 和 c-BN 面临的挑战和未来的发展方向进行了展望。
With the development of microelectronic technology, the integrated circuits of electronic chips have become increasingly compact. The internal heat flux density is rising while the performance is improved, which puts forwards higher requirements for the heat dissipation capacity of electronic devices. The performance and efficiency of electronic equipment are severely restricted by low-heat-dissipation materials. Effective heat transfer and heat management have become important guarantees for the stable operation of next-generation microprocessors, integrated circuits, light-emitting diodes, etc. Therefore, there is an urgent need to explore novel semiconductor materials with higher thermal conductivity to extend the life of electronic devices. In recent years, hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN) have attracted great attention. h-BN has a layered crystal structure similar to graphite, commonly known as “white graphite”, with excellent heat dissipation and insulation performance. While c-BN has a sphalerite structure similar to diamond, it has thermal conductivity second to that of diamond, which has the largest bandgap width among the third generation of semiconductor materials. Studies on h-BN and c-BN show that they both have good thermal conductivity and are expected to be a new generation of heat dissipation materials for electronic chips, which has become one of the research hotspots in the fields of thermal management. In this article, the research progress of the preparation methods of h-BN films and c-BN single crystals is reviewed, as well as their thermal conductivity properties, and the challenges and development prospects are also put forwards.